SiC MODULE-I3M12016MB

Characteristic

High Blocking Voltage with Low Rds(on) | Low Switching Losses | Internal lsolation | High Speed Switching | Easy to Drive and Parallel

Advantage

lmprove System Efficiency | lmprove Power Density | Reduce System Size

Sample application

I3M12016MB · 1200V · 16mΩ · 90A · SOT-227 · 175℃ · Single Switch