Company Profile

PN Junction Semiconductor (Hangzhou) Co., Ltd., established in September 2018, is a leading wide-bandgap semiconductor power devices provider . It specializes in automotive-grade silicon carbide (SiC) MOSFETs, SiC Schottky Barrier Diodes (SBDs), and gallium nitride (GaN) power devices. PN Junction Semiconductor has the most comprehensive catalog of SiC power devices in China, offering a wide range of SiC MOSFETs and SBDs with various voltage ratings and current-carrying capabilities. All products have passed AEC-Q101 certification. Our products can meet requirements of different customer applications. We can provide stable and reliable automotive-grade SiC power devices.


PN Junction Semiconductor possesses extensive technical expertise and a comprehensive industrial advantage. Its founder, Dr. Huang Xing, has been dedicated to the design and development of SiC and GaN power devices since 2009, under the guidance of Professor Jayant Baliga, the inventor of IGBT, and Professor Alex Huang, the inventor of ETO. Currently, PN Junction Semiconductor has released over 100 different products of SiC diodes, SiC MOSFETs, SiC power modules, and GaN HEMTs on the 650V, 1200V, and 1700V voltage platforms. These mass-produced products are widely used in electric vehicles, IT equipment power supplies, photovoltaic inverters, energy storage systems, industrial applications, etc.PN Junction Semiconductor ensures a continuous and stable supply to Tier 1 manufacturers, and its product quality and supply capacity have gained widespread recognition from customers.

  • 80Item+
    Intellectual Property Rights
  • 28Item+
    Domestic Invention
  • 22Item
    Utility Model
  • 3Item
    Integrated Circuit Layout
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Development path

Looking back at every moment of change in PN JUNCTION
Completed the development of 1200V 62mm SiC module
Developed and verified 1200V high-current automotive-grade MOSFET products for the first time
Completed the R&D and mass production of 1200V SiC SBD, focusing on photovoltaic and charging pile plans
Developed and verified 650V, 1700V industrial grade MOSFET products for the first time
Complete the R&D and mass production of 650V SiC SBD, and develop servers and data centers
Completed Gen3 technology 1200V SiC MOSFET to fill the gap in the country
Released the first compatible drive 650V GaN power device
  • Core Advantages

    The technology inheritance is orthodox, and the R&D accumulation is profound.
  • Honor

    The company has won many honorary qualifications since its establishment.
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