Silicon carbide (SiC) belongs to the third generation of semiconductors, SiC MOSFET is easier to work under high voltage, high frequency, high temperature conditions than traditional Si devices, PNJ SiC MOSFET has excellent gate oxygen layer reliability, and Rdson offset at high temperature can obtain better high temperature characteristics, 1700V SiC devices are suitable for many power applications like the auxiliary power supply of high bus voltage , Part of PNJ 1700V SiC devices can use 0V voltage to shutdown, Multiple packages allow to replace existing high-voltage Si MOSFET and IGBT.This SiC MOSFET is available in a TO220-3-pin package that replaces the same-package Si MOSFET , providing a better price/performance ratio.