Silicon carbide (SiC) belongs to the third generation of semiconductors, SiC MOSFET is easier to work under high voltage, high frequency, high temperature conditions than traditional Si devices, PNJ SiC MOSFET has excellent gate oxygen layer reliability, and Rdson offset at high temperature can obtain better high temperature characteristics, Multiple packages allow to replace existing high-voltage Si MOSFET and IGBT.This SiC MOSFET is small in a DFN8*8-pin package, providing increased electrical pitch and a better price/performance ratio.