SiC MODULE-PAAC12450CM

特征

Silicon Carbide MOSFET | Low RDSon | Low Switching Losses | Si3N4 Ceramic | PinFin Base Plate | Sliver Sintering Technology | Die Top System Technolog)

优势

Improve System Efficiency | Increase Power Density | Reduce Heat Sink Requirements | Reduction System Cost

样品申请

PAAC12450CM · 1200V · 2.7mΩ · 450A · HPD · 175℃ · Six-pack