SiC MODULE-P3M12010TM

特征

High Blocking Voltage with Low On-Resistance | High-Frequency Operation | Ultra-Small Qgd

优势

lmprove System Efficiency | Increase Power Density | Reduce Heat Sink Requirements | Reduction of System Cost

样品申请

P3M12010TM · 1200V · 8mΩ · 230A · TPAK · 175℃ · Single Switch