SiC MOSFET-P3M171K0G7

特征

Qualified to AEC-Q101 | High Blocking Voltage with Low On-Resistance | High-Frequency Operation | Ultra-Small Qgd | 100% UlS tested

优势

lmprove System Efficiency | Increase Power Density | Reduce Heat Sink Requirements | Reduction of System Cost

样品申请

P3M171K0G7 · 1700V · TO263-7 · 1000mΩ · 6.3A · 2.5nC · 22pF · 175°C