SiC MOSFET-P3M12090G7

特征

Qualified to AEC-Q101 | High Blocking Voltage with Low On-Resistance | High-Frequency Operation | Ultra-Small Qgd | 100% UlS tested

优势

Improve System Efficiency | Increase Power Density | Reduce Heat Sink Requirements | Reduction of System Cost

应用领域

光伏逆变器系统,车用电源

样品申请

P3M12090G7 · 1200V · TO263-7 · 90mΩ · 35A · 6nC · 62pF · 175℃