SiC MOSFET-P3M17700G7

特征

Qualified to AEC-Q101 | High Blocking Voltage with Low On- Resistance | High-Frequency Operation | Ultra-Small Qgd

优势

Improve System Efficiency | Increase Power Density | Reduce Heat Sink Requirements | Reduction of System Cost

样品申请

P3M17700G7 · 1700V · TO263-7 · 0.7Ω · 7.7A · 8.3nC · 21pF · 175℃