GaN HEMT
Considering the extremely low heat build-up and extremely high breakdown field strength of GaN, GaN HEMT, a GaN-based power device possesses a minimal forward voltage drop and switching loss. It provides the switch power supply with a switching frequency of more than 1 MHz, enabling it to achieve an extremely high power density by using minimal small energy storage elements. Hence, GaN HEMT has been widely applied in the field of consumer electronics and IT power supply.
|
P/N |
Buy Online |
Blocking |
RDS(ON) @25℃ |
Current Rating |
Package |
Qgd |
Output |
Data Sheet |
LT Spice Model |
Request Sample |
|---|
|
P/N |
Buy Online |
Blocking |
RDS(ON) @25℃ |
Current Rating |
Package |
Qgd |
Output |
Data Sheet |
LT Spice Model |
Request Sample |
|---|