SiC MOSFET

The rise and wide application of SiC MOSFET have brought a far-reaching technological revolution to the power semiconductor industry and power electronics industry. SiC MOSFET has outstanding characteristics in RDS, switching loss, high-temperature operation, and thermal conductivity, greatly improving the conversion efficiency and power density of the power electronic system and reducing the overall cost of the system. Traditional silicon-based power devices are being substituted by SiC MOSFET in industrial and automotive applications, communication power, and data center. PN Junction Semiconductor has an extensive line of 650V, 1200V, and 1700V mass-produced discrete devices and a complete product catalog in different current carrying capacities and packaging forms, which can provide customers with a full range of choices.

P/N

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Blocking
Voltage

Package

RDS(ON)
@25℃

Current
Rating

Qgd

Output
Capacitance

Max
Junction
Temperature

Data

Sheet

LT Spice

Model

Request

Sample

P/N

Buy Online

Blocking
Voltage

Package

RDS(ON)
@25℃

Current
Rating

Qgd

Output
Capacitance

Max
Junction
Temperature

Data

Sheet

LT Spice

Model

Request

Sample