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Focus on wide-bandgap power semiconductor devices design and Marketing

Represented by silicon carbide and gallium nitride, the third-generation semiconductor materials are characterized by large forbidden band gap, high breakdown field strength, high thermal conductivity, high electron saturation rate and strong radiation resistance. Compared with traditional silicon-based power semiconductor devices, power semiconductor devices based on silicon carbide and gallium nitride have significant advantages such as low on-resistance, low switching loss, high operating junction temperature, and high thermal conductivity. Therefore, the power electronic converters using SiC-based power semiconductor devices and GaN-based power semiconductor devices can significantly increase the switching frequency and reduce the size of heat sinks, energy storage elements and filters, so as to achieve higher conversion efficiency and power density. Meanwhile, SiC-based power semiconductor devices and GaN-based power semiconductor devices are gradually replacing traditional silicon-based power semiconductor devices, bringing a far-reaching change to the power electronic converter industry. PN Junction Semiconductor focuses on the design and promotion of third-generation semiconductors, having profound technology accumulation and comprehensive industrial chain advantages. The design level of PN Junction Semiconductor's SiC MOSFETs is at the forefront of the industry, and the key technical indicator HDFM is world leading. PN Junction Semiconductor has released more than 100 different types of SiC diode, SiC MOSFET, SiC power module and GaN HEMT products on three voltage platforms of 650V, 1200V and 1700V, providing customers with a full range of choices and technical support. PN Junction Semiconductor's mass-produced products have been widely used in electric vehicles, IT equipment power supplies, photovoltaic inverters, energy storage systems, industrial applications and other fields, providing continuous and stable products to Tier 1 manufacturers, and the product quality and supply ability have been widely recognized by customers.

SiC SBD

The reverse recovery charge of SiC SBD is much smaller than that of similar silicon diodes and SiC SBD can be operated at higher junction temperature. Therefore, applying SiC SBD in switch power supply application can greatly reduce reverse recovery loss and switching noise. Meanwhile, it can increase the conversion efficiency, the overall power density, as well as the reliability of the switch power supply. The unique characteristics of SiC SBD can significantly lower the overall cost of a power electronic system.
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SiC MOSFET

The rise and wide application of SiC MOSFET have brought a far-reaching technological revolution to the power semiconductor industry and power electronics industry. SiC MOSFET has outstanding characteristics in RDS, switching loss, high-temperature operation, and thermal conductivity, greatly improving the conversion efficiency and power density of the power electronic system and reducing the overall cost of the system. Traditional silicon-based power devices are being substituted by SiC MOSFET in industrial and automotive applications, communication power, and data center. PN Junction Semiconductor has an extensive line of 650V, 1200V, and 1700V mass-produced discrete devices and a complete product catalog in different current carrying capacities and packaging forms, which can provide customers with a full range of choices.
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GaN HEMT

Considering the extremely low heat build-up and extremely high breakdown field strength of GaN, GaN HEMT, a GaN-based power device possesses a minimal forward voltage drop and switching loss. It provides the switch power supply with a switching frequency of more than 1 MHz, enabling it to achieve an extremely high power density by using minimal small energy storage elements. Hence, GaN HEMT has been widely applied in the field of consumer electronics and IT power supply.
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SiC MODULE

In the application of high voltage and high power converters, the power module is mainly used as the solution in the industry for its high integration and excellent heat dissipation. Compared with silicon-based semiconductor power devices, SiC MOSFET has obvious advantages in conduction loss, switching loss, maximum operating junction temperature, and thermal conductivity. Hence, the power module based on SiC MOSFET has attracted considerable attention from the industry circle in recent years. The successful application of SiC power modules in electric vehicles not only extends the recharge mileage but also improves the overall reliability of electric vehicles. Moreover, the SiC power module also has potential competitiveness and application value in industrial applications, such as PV inverter, energy storage, power systems, etc.
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