PN Junction Semiconductor (Hangzhou) Co., Ltd., established in September 2018, is a leading wide-bandgap semiconductor power devices provider . It specializes in automotive-grade silicon carbide (SiC) MOSFETs, SiC Schottky Barrier Diodes (SBDs), and gallium nitride (GaN) power devices. PN Junction Semiconductor has the most comprehensive catalog of SiC power devices in China, offering a wide range of SiC MOSFETs and SBDs with various voltage ratings and current-carrying capabilities. All products have passed AEC-Q101 certification. Our products can meet requirements of different customer applications. We can provide stable and reliable automotive-grade SiC power devices.

PN Junction Semiconductor possesses extensive technical expertise and a comprehensive industrial advantage. Its founder, Dr. Huang Xing, has been dedicated to the design and development of SiC and GaN power devices since 2009, under the guidance of Professor Jayant Baliga, the inventor of IGBT, and Professor Alex Huang, the inventor of ETO. Currently, PN Junction Semiconductor has released over 100 different products of SiC diodes, SiC MOSFETs, SiC power modules, and GaN HEMTs on the 650V, 1200V, and 1700V voltage platforms. These mass-produced products are widely used in electric vehicles, IT equipment power supplies, photovoltaic inverters, energy storage systems, industrial applications, etc.PN Junction Semiconductor ensures a continuous and stable supply to Tier 1 manufacturers, and its product quality and supply capacity have gained widespread recognition from customers.